PART |
Description |
Maker |
MGSF3455VT1 MGSF3455VT1_D ON1910 MGSF3455VT1-D ON1 |
From old datasheet system P-CHANNEL ENHANCEMENT?ODE P-CHANNEL ENHANCEMENT-MODE TMOS MOSFET Low Rds(on) Small-Signal MOSFETs TMOS Single P-Channel Field Effect Transistors
|
MOTOROLA[Motorola, Inc] ON Semiconductor
|
MMFT5P03HD ON2230 MMFT5P03HDT3 ON2229 |
TMOS MEDIUM POWER FET 5.2 AMPERES 30 VOLTS From old datasheet system TMOS P-CHANNEL FIELD FEECT TRANSISTOR
|
MOTOROLA[Motorola, Inc]
|
MTP10N60E7 ON2541 MTP10N60E7-D |
TMOS 7 E-FET High Energy Power FET TMOS 7 E-FET High Energy Power FET N-Channel Enhancement-Mode Silicon Gate From old datasheet system TMOS POWER FET 10 AMPERES 600 VOLTS
|
ON Semiconductor
|
MTB10N60E7 ON2391 MTB10N60E7-D MTB10N60E7T4 |
TMOS 7 E-FET High Energy Power FET N-Channel Enhancement-Mode Silicon Gate TMOS 7 E-FET High Energy Power FET From old datasheet system TMOS POWER FET 10 AMPERES 600 VOLTS
|
ON Semiconductor
|
MTD3N25E MTD3N25E-D |
TMOS E-FET Power Field Effect Transistor DPAK for Surface Mount N-Channel Enhancement-Mode Silicon Gate TMOS POWER FET 3 AMPERES 250 VOLTS RDS(on) = 1.4 OHM
|
ON Semiconductor MOTOROLA[Motorola, Inc]
|
MTV6N100E MTV6N100E_D ON2675 MTV6N100E-D |
TMOS E-FET Power Field Effect Transistor D3PAK for Surface Mount N-Channel Enhancement - Mode Silicon Gate TMOS POWER FET 6.0 AMPERES 1000 VOLTS RDS(on) = 1.5 OHM From old datasheet system
|
ON Semiconductor MOTOROLA[Motorola, Inc]
|
MTB2N40E MTB2N40E-D |
TMOS E-FET High Energy Power FET D2PAK for Surface Mount N-Channel Enhancement-Mode Silicon Gate TMOS POWER FET 2.0 AMPERES 400 VOLTS
|
ON Semiconductor MOTOROLA[Motorola, Inc]
|
MTD6N10E ON2512 MTD6N10E-D |
TMOS E-FET Power Field Effect Transistor DPAK for Surface Mount N-Channel Enhancement-Mode Silicon Gate TMOS POWER FET 6.0 AMPERES 100 VOLTS RDS(on) = 0.400 OHM From old datasheet system
|
ON Semiconductor MOTOROLA[Motorola, Inc]
|
MTB3N60E_D ON2423 MTB3N60E MTB3N60E-D ON2422 |
From old datasheet system TMOS POWER FET 3.0 AMPERES 600 VOLTS TMOS E-FET High Energy Power FET D2PAK for Surface Mount N-Channel Enhancement-Mode Silicon Gate
|
MOTOROLA[Motorola, Inc] ON Semiconductor
|
MTD12N06EZL_D ON2462 MTD12N06EZL-D |
TMOS E-FET High Energy Power FET DPAK for Surface Mount or Insertion Mount N-Channel Enhancement-Mode Silicon Gate From old datasheet system TMOS POWER FET 12 AMPERES 60 VOLTS
|
ON Semiconductor
|